Continuation methods in semiconductor device simulation

Advanced Numerical Methods and Software Approaches for Semiconductor Device Simulation

In this article we concisely present severalmodern strategiesthat are applicable to drift-dominated carriertransport in higher-orderdeterministicmodels such as the driftdiffusion,hydrodynamic, and quantumhydrodynamic systems. The approachesinclude extensions of “upwind” and artificialdksipation schemes, generalizationof the tradltional Scharfetter-Gummel approach, Petrov-Galerkin and streamline...

Semiconductor Device Simulation by a New Method of Solving Poisson, Laplace and Schrodinger Equations (RESEARCH NOTE)

In this paper, we have extended and completed our previous work, that was introducing a new method for finite differentiation. We show the applicability of the method for solving a wide variety of equations such as Poisson, Lap lace and Schrodinger. These equations are fundamental to the most semiconductor device simulators. In a section, we solve the Shordinger equation by this method in sever...

Physical Models for Semiconductor Device Simulation

Device simulation has two main purposes: to understand and to depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of the next device generation. Towards these goals, the quality of the implemented physical models is decisive, forcing heuristic t models to be replaced by \\rst-principle"-based models. Since transport schemes using moments o...

Tunneling Models for Semiconductor Device Simulation

Three - Dimensional Adaptive Semiconductor Device Simulation

We present results from a three-dimensional device simulator, using adaptive meshing and solving the drift-diffusion equations. The adaption algorithm and the criteria used for adap-tion are discussed. Three devices of industrial interest are presented: a bipolar transistor, a 1.25/zm n-MOS device and a CCD, illustrating the range of devices which may be successfully simulated.